Bulk acoustic wave resonator and method of manufacturing the same

A method of manufacturing a bulk acoustic wave resonator includes: forming a sacrificial layer on a substrate protection layer; forming a membrane layer on the substrate protection layer to cover the sacrificial layer; and forming a cavity by removing the sacrificial layer using a gas mixture compri...

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Bibliographische Detailangaben
Hauptverfasser:	Lee, Moon Chul, Yoon, Sang Kee, Lee, Tae Kyung, Park, Hyung Jae, Park, Nam Soo
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS RESONATORS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A method of manufacturing a bulk acoustic wave resonator includes: forming a sacrificial layer on a substrate protection layer; forming a membrane layer on the substrate protection layer to cover the sacrificial layer; and forming a cavity by removing the sacrificial layer using a gas mixture comprising a halide-based gas and an oxygen-containing gas, wherein a mixture ratio of the halide-based gas to the oxygen-containing gas in the gas mixture is in a range from 1.5 to 2.4.