NAND field use erase plus defect detections

NAND field use erase plus defect detections

A method for detecting defects in a memory system includes receiving a command to perform a standard erase operation on at least one memory cell of the memory system. The method also includes performing a first defect detection operation on the at least one memory cell. The method also includes sett...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Rajagiri, Avinash, Liao, Dongxiang, Peesari, Srikar, Linnen, Daniel, Krishnamoorthy, Yuvaraj, Ghai, Ashish
Format: Patent
Sprache:eng
Schlagworte:
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Beschreibung
Zusammenfassung:A method for detecting defects in a memory system includes receiving a command to perform a standard erase operation on at least one memory cell of the memory system. The method also includes performing a first defect detection operation on the at least one memory cell. The method also includes setting, in response to the first defect detection operation detecting a defect, a defect status indicator. The method also includes performing the standard erase operation on the at least one memory cell. The method also includes performing a second defect detection operation on the at least one memory cell. The method also includes setting, in response to the second defect detection operation detecting a defect, the defect status indicator.