Method of manufacturing semiconductor device comprising doped gate spacer

A semiconductor device includes a substrate, at least one source drain feature, a gate structure, and at least one gate spacer. The source/drain feature is present at least partially in the substrate. The gate structure is present on the substrate. The gate spacer is present on at least one sidewall...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Chan, Chia-Ling, Lin, Mu-Tsang, Cheng, Tung-Wen, Lo, Wei-Yang
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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