Method of manufacturing semiconductor device comprising doped gate spacer

Method of manufacturing semiconductor device comprising doped gate spacer

A semiconductor device includes a substrate, at least one source drain feature, a gate structure, and at least one gate spacer. The source/drain feature is present at least partially in the substrate. The gate structure is present on the substrate. The gate spacer is present on at least one sidewall...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Chan, Chia-Ling, Lin, Mu-Tsang, Cheng, Tung-Wen, Lo, Wei-Yang
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device includes a substrate, at least one source drain feature, a gate structure, and at least one gate spacer. The source/drain feature is present at least partially in the substrate. The gate structure is present on the substrate. The gate spacer is present on at least one sidewall of the gate structure. At least a bottom portion of the gate spacer has a plurality of dopants therein.