Techniques, system and apparatus for selective deposition of a layer using angled ions

A method is provided. The method may include providing a substrate, the substrate comprising a substrate surface, the substrate surface having a three-dimensional shape. The method may further include directing a depositing species from a deposition source to the substrate surface, wherein a layer i...

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Bibliographische Detailangaben
Hauptverfasser:	Anglin, Kevin, Hatem, Christopher
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A method is provided. The method may include providing a substrate, the substrate comprising a substrate surface, the substrate surface having a three-dimensional shape. The method may further include directing a depositing species from a deposition source to the substrate surface, wherein a layer is deposited on a deposition region of the substrate surface. The method may include performing a substrate scan during the directing or after the directing to transport the substrate from a first position to a second position. The method may also include directing angled ions to the substrate surface, in a presence of the layer, wherein the layer is sputter-etched from a first portion of the deposition region, and wherein the layer remains in a second portion of the deposition region.