ReRAM programming method including low-current pre-programming for program time reduction

ReRAM programming method including low-current pre-programming for program time reduction

A method for programming a resistive random-access memory (ReRAM) cell includes passing a first current through the ReRAM device for a first period of time, the first current selected to create a leakage path through the ReRAM device, and after passing the first current through the ReRAM device pass...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Nguyen, Victor, Dhaoui, Fethi, McCollum, John L, Xue, Fengliang
Format: Patent
Sprache:eng
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Beschreibung
Zusammenfassung:A method for programming a resistive random-access memory (ReRAM) cell includes passing a first current through the ReRAM device for a first period of time, the first current selected to create a leakage path through the ReRAM device, and after passing the first current through the ReRAM device passing a second current through the ReRAM device for a second period of time shorter than the first period of time, the second current selected to create a current path having a desired resistance through the leakage path through the ReRAM device.