Formation of correlated electron material (CEM) devices with restored sidewall regions

Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments, formation of a CEM switch may include removing of an exposed portion of a CEM film to form an exposed sidewall region bordering a remaining unexposed portion of the CE...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	He, Ming, Besser, Paul Raymond, Celinska, Jolanta Bozena
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In particular embodiments, formation of a CEM switch may include removing of an exposed portion of a CEM film to form an exposed sidewall region bordering a remaining unexposed portion of the CEM film under or beneath a conductive overlay. The method may further include at least partially restoring properties of the exposed sidewall region to a CEM via exposure of the exposed sidewall region to one or more gaseous annealing agents.