n-Type semiconductor layer, thermoelectric conversion layer, thermoelectric conversion element, thermoelectric conversion module, and composition for forming n-type semiconductor layer

n-Type semiconductor layer, thermoelectric conversion layer, thermoelectric conversion element, thermoelectric conversion module, and composition for forming n-type semiconductor layer

The n-type semiconductor layer of the embodiment of the present invention contains a nanocarbon material and an onium salt represented by a specific structure.

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Bibliographische Detailangaben
Hauptverfasser: Nomura, Kimiatsu, Sugiura, Hiroki, Kanazawa, Yoshinori
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
CHEMISTRY
COMPOUNDS THEREOF
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The n-type semiconductor layer of the embodiment of the present invention contains a nanocarbon material and an onium salt represented by a specific structure.