Thin film resistor and top plate of capacitor sharing a layer

An integrated circuit (IC) includes a substrate with a semiconductor surface layer including functional circuitry having a plurality of interconnected transistors including a dielectric layer thereon with a metal stack including a plurality of metal levels over the dielectric layer. A thin film resi...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Shao, Ye, Curran, David, Kande, Dhishan
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:An integrated circuit (IC) includes a substrate with a semiconductor surface layer including functional circuitry having a plurality of interconnected transistors including a dielectric layer thereon with a metal stack including a plurality of metal levels over the dielectric layer. A thin film resistor (TFR) layer including at least one metal is within the metal stack. At least one capacitor is within the metal stack including a capacitor dielectric layer over a metal bottom plate formed from one of the metal levels. The capacitor top plate is formed from the TFR layer on the capacitor dielectric layer and there is at least one resistor lateral to the capacitor formed from the same TFR layer.