Perpendicular magnetic memory with symmetric fixed layers

Perpendicular magnetic memory with symmetric fixed layers

An embodiment includes an apparatus including: a substrate; a perpendicular magnetic tunnel junction (pMTJ), on the substrate, including a first fixed layer, a second fixed layer, and a free layer between the first and second fixed layers; a first dielectric layer between the first fixed layer and t...

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Bibliographische Detailangaben
Hauptverfasser: Doczy, Mark L, Brockman, Justin S, Doyle, Brian S, Alzate Vinasco, Juan G, Kuo, Charles C, Chau, Robert S, Oguz, Kaan, O'Brien, Kevin P, Suri, Satyarth
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:An embodiment includes an apparatus including: a substrate; a perpendicular magnetic tunnel junction (pMTJ), on the substrate, including a first fixed layer, a second fixed layer, and a free layer between the first and second fixed layers; a first dielectric layer between the first fixed layer and the free layer; and a second layer between the second fixed layer and the free layer. Other embodiments are described herein.