Lithographic overlay correction and lithographic process

A method includes receiving a wafer, defining a plurality of zones over the wafer, performing a multi-zone alignment compensation for each of the plurality of zones according to an equation along a first direction to obtain a plurality of compensation values for each of the plurality of zones, and p...

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Bibliographische Detailangaben
Hauptverfasser: Lee, Yung-Yao, Wang, Ying Ying, Hung, Ai-Jen, Liu, Heng-Hsin, Wang, Chin-Chen
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A method includes receiving a wafer, defining a plurality of zones over the wafer, performing a multi-zone alignment compensation for each of the plurality of zones according to an equation along a first direction to obtain a plurality of compensation values for each of the plurality of zones, and performing a wafer alignment and a lithography exposure for each of the plurality of zones according to the plurality of compensation values. The wafer alignment and the lithography exposure are performed zone-by-zone.