Thin film transistor and manufacture method thereof

Disclosed are a thin film transistor and a manufacture method thereof. The thin film transistor according to the embodiments of the present disclosure comprises: a base substrate; an active layer composed of polysilicon on the base substrate; and a first gate insulating layer having a preset intrins...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Chan, Yucheng, Li, Dong
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Disclosed are a thin film transistor and a manufacture method thereof. The thin film transistor according to the embodiments of the present disclosure comprises: a base substrate; an active layer composed of polysilicon on the base substrate; and a first gate insulating layer having a preset intrinsic tensile stress on the active layer.