Self-aligned contact and manufacturing method thereof

Self-aligned contact and manufacturing method thereof

A semiconductor device and a method of forming the semiconductor device is disclosed. A sacrificial film is used to pattern a contact to a semiconductor structure, such as a contact to a source/drain region of a transistor. The contact may include a tapered profile along an axis parallel to the gate...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Yeh, Jeng-Ya David, Lee, Tung Ying, Yeh, Chih Chieh, Yeo, Yee-Chia, Chiu, Yuan-Hung, Liu, Chi-Wen
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device and a method of forming the semiconductor device is disclosed. A sacrificial film is used to pattern a contact to a semiconductor structure, such as a contact to a source/drain region of a transistor. The contact may include a tapered profile along an axis parallel to the gate electrode such that an outermost width of the contact decreases as the contact extends away from the source/drain region.