Ion beam etch without need for wafer tilt or rotation

Various embodiments herein relate to methods and apparatus for etching feature on a substrate. In a number of embodiments, no substrate rotation or tilting is used. While conventional etching processes rely on substrate rotation to even out the distribution of ions over the substrate surface, various embodiments herein achieve this purpose by moving the ion beams relative to the ion source. Movement of the ion beams can be achieved in a number of ways including electrostatic techniques, mechanical techniques, magnetic techniques, and combinations thereof.