Method of detecting a defect on a substrate, apparatus for performing the same and method of manufacturing semiconductor device using the same

Method of detecting a defect on a substrate, apparatus for performing the same and method of manufacturing semiconductor device using the same

In a method of detecting a defect on a substrate, an incident beam may be radiated to a surface of the substrate to generate reflected light beams. A second harmonic generation (SHG) beam among the reflected light beams may be detected. The SHG beam may be generated by a defect on the substrate. A n...

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Bibliographische Detailangaben
Hauptverfasser: Bae, Sang-Woo, Okubo, Akinori, Riabko, Maksim, Cho, Seong-Keun, Joo, Won-Don, Lee, Sang-Min, Jeang, Eun-Hee, Medvedev, Anton, Shorokhov, Aleksandr
Format: Patent
Sprache:eng
Schlagworte:
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES
MEASURING
PHYSICS
TESTING
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Zusammenfassung:In a method of detecting a defect on a substrate, an incident beam may be radiated to a surface of the substrate to generate reflected light beams. A second harmonic generation (SHG) beam among the reflected light beams may be detected. The SHG beam may be generated by a defect on the substrate. A nano size defect may be detected by examining the SHG beam.