N-doped semiconducting material comprising two metal dopants

The present invention relates to a semiconducting material comprising (i) a substantially covalent matrix material consisting of at least one substantially covalent matrix compound, (ii) at least one first metal selected from the group consisting of Li, Na, K, Rb, and Cs, and (iii) at least one seco...

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Bibliographische Detailangaben
Hauptverfasser:	Rothe, Carsten, Willmann, Steffen, Kalisz, Tomas, Gölfert, Uwe, Jankus, Vygintas, Cardinali, Francois, Ganier, Jerome, Schulze, Benjamin
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present invention relates to a semiconducting material comprising (i) a substantially covalent matrix material consisting of at least one substantially covalent matrix compound, (ii) at least one first metal selected from the group consisting of Li, Na, K, Rb, and Cs, and (iii) at least one second metal selected from the group consisting of Zn, Hg, Cd and Te, electronic devices comprising such materials and processes for preparing the same.