Semiconductor device and method for making the same

According to some example embodiments of the present disclosure, a semiconductor device includes: a substrate; a first semiconductor layer over the substrate, the first semiconductor layer being a first type of semiconductor device; and a second semiconductor layer over the substrate and the first s...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Sengupta, Rwik, Hong, Joon Goo, Gerousis, Vassilios, Rodder, Mark S
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:According to some example embodiments of the present disclosure, a semiconductor device includes: a substrate; a first semiconductor layer over the substrate, the first semiconductor layer being a first type of semiconductor device; and a second semiconductor layer over the substrate and the first semiconductor layer, the second semiconductor layer being the first type of semiconductor device, wherein a first portion of the first semiconductor layer overlaps the second semiconductor layer when viewed in a direction perpendicular to a plane of the substrate and a second portion of the first semiconductor layer is laterally offset from the second semiconductor layer when viewed in the direction perpendicular to the plane of the substrate.