Low emission cladding and ion implanter
An ion implanter. The ion implanter may include a beamline, the beamline defining an inner wall, surrounding a cavity, the cavity arranged to conduct an ion beam. The ion implanter may also include a low emission insert, disposed on the inner wall, and further comprising a 12C layer, the 12C layer h...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | An ion implanter. The ion implanter may include a beamline, the beamline defining an inner wall, surrounding a cavity, the cavity arranged to conduct an ion beam. The ion implanter may also include a low emission insert, disposed on the inner wall, and further comprising a 12C layer, the 12C layer having an outer surface, facing the cavity. |
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