ScAlMgO4 single crystal and device

An object is to provide a high-quality ScAlMgO4 single crystal and a device. The ScAlMgO4 single crystal includes Sc, Al, Mg, and O, in which the atomic percentage ratio of Mg to Al, Mg/Al (atom %/atom %), as measured by an inductively coupled plasma emission spectrometric method, is more than 1 and...

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Bibliographische Detailangaben
Hauptverfasser:	Miyano, Kentaro, Ueta, Akio, Nobuoka, Masaki, Ryoki, Naoya, Asahi, Takehiro
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	An object is to provide a high-quality ScAlMgO4 single crystal and a device. The ScAlMgO4 single crystal includes Sc, Al, Mg, and O, in which the atomic percentage ratio of Mg to Al, Mg/Al (atom %/atom %), as measured by an inductively coupled plasma emission spectrometric method, is more than 1 and less than 1.1.