Single electron transistors having source/drain electrode insulating supports and an island extending therebetween

Disclosed herein are single electron transistor (SET) devices, and related methods and devices. In some embodiments, a SET device may include: first and second source/drain (S/D) electrodes disposed on a side face of a first insulating support and on a side face of a second insulating support, respe...

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Bibliographische Detailangaben
1. Verfasser:	George, Hubert C
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CALCULATING COMPUTER SYSTEMS BASED ON SPECIFIC COMPUTATIONAL MODELS COMPUTING COUNTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS PHYSICS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TRANSPORTING
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Beschreibung
Zusammenfassung:	Disclosed herein are single electron transistor (SET) devices, and related methods and devices. In some embodiments, a SET device may include: first and second source/drain (S/D) electrodes disposed on a side face of a first insulating support and on a side face of a second insulating support, respectively; an island disposed between the first and second S/D electrodes and extending into an area between the first and second insulating supports. In some embodiments, a SET device may include: first and second S/D electrodes disposed on a substrate; an island disposed in an area between the first and second S/D electrodes; first and second portions of dielectric disposed between the island and the first and second S/D electrodes, respectively; and a third portion of dielectric disposed between the substrate and the island.