Balancer for multiple field effect transistors arranged in a parallel configuration

In at least one general aspect, an apparatus can include a first field effect transistor (FET) device and a second FET device. The apparatus can include a characterization circuit coupled to the first FET device and the second FET device where the characterization circuit can be configured to charac...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Mitter, Chang Su, Mikolajczak, Adrian
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:In at least one general aspect, an apparatus can include a first field effect transistor (FET) device and a second FET device. The apparatus can include a characterization circuit coupled to the first FET device and the second FET device where the characterization circuit can be configured to characterize a responsiveness of each of the first FET device and the second FET device. The apparatus can include a balancer configured to produce a modified gate drive signal for the first FET device based on the responsiveness of the first FET device.