Memory device

Memory device

A memory device includes a first conductive layer and a second conductive layer. A variable resistance layer is disposed between the first conductive layer and the second conductive layer and includes a first layer containing a semiconductor or a first metal oxide, and a second layer containing a se...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Han, Yefei, Morooka, Tetsu
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:A memory device includes a first conductive layer and a second conductive layer. A variable resistance layer is disposed between the first conductive layer and the second conductive layer and includes a first layer containing a semiconductor or a first metal oxide, and a second layer containing a second metal oxide. A phase-change layer is disposed either between the first conductive layer and the variable resistance layer or between the second conductive layer and the variable resistance layer.