Semiconductor device including a passivation spacer and method of fabricating the same

Semiconductor device including a passivation spacer and method of fabricating the same

A method of fabricating a semiconductor device includes providing a substrate, and forming an interlayered insulating layer on the substrate. The method includes forming a preliminary via hole in the interlayered insulating layer. The method includes forming a passivation spacer on an inner side sur...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Yoon, Chan-Sic, Moon, Ilyoung, Hong, Jiseok, Lee, Kiseok, Park, Jemin, Han, Jung-Hoon
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method of fabricating a semiconductor device includes providing a substrate, and forming an interlayered insulating layer on the substrate. The method includes forming a preliminary via hole in the interlayered insulating layer. The method includes forming a passivation spacer on an inner side surface of the preliminary via hole. The method includes forming a via hole using the passivation spacer as an etch mask. The method includes forming a conductive via in the via hole. The passivation spacer includes an insulating material different from an insulating material included in the interlayered insulating layer.