Memory system and method

A memory system includes a plurality of memory cells and a controller. During a write operation to write data to the memory cells, the controller encodes first data to be written at a first code rate. During a read operation to read data from the memory cells, the controller decodes second data read...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	Ueki, Katsuhiko, Kuroda, Sumio, Ozawa, Yasuyuki
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRONIC CIRCUITRY CALCULATING CODE CONVERSION IN GENERAL CODING COMPUTING COUNTING DECODING ELECTRIC DIGITAL DATA PROCESSING ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
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Beschreibung
Zusammenfassung:	A memory system includes a plurality of memory cells and a controller. During a write operation to write data to the memory cells, the controller encodes first data to be written at a first code rate. During a read operation to read data from the memory cells, the controller decodes second data read from the memory cells at the first code rate. The controller changes the first code rate to a second code rate that is less than the first code rate upon determining that the number of error bits during the read operation of the second data is above a threshold number for error bits or upon determining that the number of memory cells having a threshold voltage that is in a voltage range that includes a read voltage is above a threshold number for memory cells.