Semiconductor device and method of forming the semiconductor device

A semiconductor device includes a first dielectric layer including a first contact hole, a second dielectric layer formed on the first dielectric layer, and including a second contact hole aligned with the first contact hole, and a reflowed copper layer formed in the first and second contact holes.

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Bibliographische Detailangaben
Hauptverfasser:	Clevenger, Lawrence A, Wang, Junli, Yang, Chih-Chao, Sheets, II, John E, Li, Baozhen, Peterson, Kirk David
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A semiconductor device includes a first dielectric layer including a first contact hole, a second dielectric layer formed on the first dielectric layer, and including a second contact hole aligned with the first contact hole, and a reflowed copper layer formed in the first and second contact holes.