Resistive memory storage apparatus and writing method thereof including disturbance voltage

Resistive memory storage apparatus and writing method thereof including disturbance voltage

A writing method of a resistive memory storage apparatus includes: applying one of a set voltage and a reset voltage serving as a first selected voltage to a memory cell and obtaining a first read current; applying a disturbance voltage to the memory cell and obtaining a second read current; and det...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Lin, Lih-Wei, Cheng, Lung-Chi, Liu, Min-Yen, Chiang, Huan-Ming
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:A writing method of a resistive memory storage apparatus includes: applying one of a set voltage and a reset voltage serving as a first selected voltage to a memory cell and obtaining a first read current; applying a disturbance voltage to the memory cell and obtaining a second read current; and determining whether a relationship between the first and second read currents satisfies a preset relationship, and if not, applying the other of the set voltage and the reset voltage serving as a second selected voltage to the memory cell and applying the first selected voltage to the memory cell again. A polarity of the disturbance voltage is different from that of the first selected voltage, and the absolute value of the disturbance voltage is less than that of the second selected voltage. A resistive memory storage apparatus is also provided.