Plasma-enhanced anneal chamber for wafer outgassing
Implementations described herein provide for thermal substrate processing apparatus including two thermal process chambers, each defining a process volume, and a substrate support disposed within each process volume. One or more remote plasma sources may be in fluid communication with the process vo...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | Implementations described herein provide for thermal substrate processing apparatus including two thermal process chambers, each defining a process volume, and a substrate support disposed within each process volume. One or more remote plasma sources may be in fluid communication with the process volumes and the remote plasma sources may be configured to deliver a plasma to the process volumes. Various arrangements of remote plasma sources and chambers are described. |
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