Memory structure with multi-cell poly pitch

Memory structure with multi-cell poly pitch

Various implementations described herein refer to an integrated circuit having a memory structure with a two-bitcell layout and a four cell poly pitch. The two-bitcell layout includes a first bitcell and a second bitcell with structural contours that are joined together in a coupling arrangement. Th...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Kumar, Munish, Thyagarajan, Sriram, Chong, Yew Keong
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:Various implementations described herein refer to an integrated circuit having a memory structure with a two-bitcell layout and a four cell poly pitch. The two-bitcell layout includes a first bitcell and a second bitcell with structural contours that are joined together in a coupling arrangement. The first bitcell and the second bitcell have multiple transistors that are arranged to store data during write operations and allow access of data during read operations.