Light emitting diode and light emitting diode package
A light emitting diode including a first conductive type semiconductor layer, a mesa disposed on the first conductive type semiconductor layer, the mesa including an active layer and a second conductive type semiconductor layer, a reflective electrode disposed on the mesa and configured to be in ohm...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | A light emitting diode including a first conductive type semiconductor layer, a mesa disposed on the first conductive type semiconductor layer, the mesa including an active layer and a second conductive type semiconductor layer, a reflective electrode disposed on the mesa and configured to be in ohmic-contact with the second conductive type semiconductor layer, a current spreading layer disposed on the mesa and the reflective electrode, the current spreading layer including a first portion configured to be in ohmic-contact with an upper surface of the first conductive type semiconductor layer, a first n-contact region spaced apart from a second n-contact region with the mesa disposed between the first and second n-contact regions, and an insulation layer including a first opening exposing the reflective electrode between the first and second n-contact regions. The first and second n-contact regions have a second opening that exposes the first conductive type semiconductor layer. |
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