Memory cell structures

The present disclosure includes memory cell structures and method of forming the same. One such method includes forming a memory cell includes forming, in a first direction, a select device stack including a select device formed between a first electrode and a second electrode; forming, in a second...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Ramaswamy, D. V. Nirmal, Sills, Scott E
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The present disclosure includes memory cell structures and method of forming the same. One such method includes forming a memory cell includes forming, in a first direction, a select device stack including a select device formed between a first electrode and a second electrode; forming, in a second direction, a plurality of sacrificial material lines over the select device stack to form a via; forming a programmable material stack within the via; and removing the plurality of sacrificial material lines and etching through a portion of the select device stack to isolate the select device.