Methods for forming a semiconductor device and semiconductor devices

A method for forming a semiconductor device includes forming a laser marking buried within a semiconductor substrate and thinning the semiconductor substrate from a backside of the semiconductor substrate. For example, a semiconductor device includes a semiconductor substrate located in a semiconduc...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Mariani, Franco, Kaspar, Korbinian
Format: Patent
Sprache:eng
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Zusammenfassung:A method for forming a semiconductor device includes forming a laser marking buried within a semiconductor substrate and thinning the semiconductor substrate from a backside of the semiconductor substrate. For example, a semiconductor device includes a semiconductor substrate located in a semiconductor package. A laser marking is buried within the semiconductor substrate. For example, another semiconductor device includes a semiconductor substrate. A laser marking is located at a backside surface of the semiconductor substrate. Further, a portion of the backside surface located adjacent to the laser marking is free of recast material.