Method for manufacturing package substrate for mounting a semiconductor device, and method for manufacturing semiconductor device mounting substrate

A method for manufacturing a package substrate for mounting a semiconductor device, including a substrate forming step (a) of forming a supporting substrate for circuit formation including a first insulating resin layer, a release layer including at least a silicon compound, and ultrathin copper foi...

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Bibliographische Detailangaben
Hauptverfasser:	Kawashita, Kazuaki, Ogashiwa, Takaaki, Kato, Yoshihiro, Nakajima, Youichi, Hirano, Syunsuke
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PERFORMING OPERATIONS PRINTED CIRCUITS PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
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Beschreibung
Zusammenfassung:	A method for manufacturing a package substrate for mounting a semiconductor device, including a substrate forming step (a) of forming a supporting substrate for circuit formation including a first insulating resin layer, a release layer including at least a silicon compound, and ultrathin copper foil having a thickness of 1 μm to 5 μm, in this order; a first wiring conductor forming step (b) of forming a first wiring conductor on the ultrathin copper foil of the supporting substrate for circuit formation by pattern copper electroplating; a lamination step (c) of disposing a second insulating resin layer so as to be in contact with the first wiring conductor, and heating and pressurizing the second insulating resin layer for lamination; a second wiring conductor forming step (d) of forming in the second insulating resin layer a non-through hole reaching the first wiring conductor and connecting an inner wall of the non-through hole.