Semiconductor device

Each of a P-side IGBT and an N-side IGBT connected in series to implement an arm includes a first gate and a second gate. In each of a drive circuit unit configured to control a voltage of the first gate with respect to a collector of the P-side IGBT, a drive circuit unit configured to control a vol...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser:	Satoh, Katsumi
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC,OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWERSUPPLY SYSTEMS BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY CONTROL OR REGULATION THEREOF CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUTPOWER CONVERSION OR DISTRIBUTION OF ELECTRIC POWER ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERATION PULSE TECHNIQUE SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Each of a P-side IGBT and an N-side IGBT connected in series to implement an arm includes a first gate and a second gate. In each of a drive circuit unit configured to control a voltage of the first gate with respect to a collector of the P-side IGBT, a drive circuit unit configured to control a voltage of the second gate with respect to an emitter of the P-side IGBT, and a drive circuit unit configured to control a voltage of the second gate with respect to a collector of the N-side IGBT, a signal processing circuit and an output circuit are electrically isolated from each other by an isolation structure.