High-frequency electronic device and manufacturing method thereof

A high-frequency electronic device including a dielectric substrate, a first patterned metal layer and a second patterned metal layer is provided. The dielectric substrate has a first region and a second region. The first patterned metal layer is disposed on a first side of the dielectric substrate...

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Bibliographische Detailangaben
Hauptverfasser: Wang, Yan-Syun, Tsai, Chi-Che, Wu, Wei-Yen, Li, I-Yin
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A high-frequency electronic device including a dielectric substrate, a first patterned metal layer and a second patterned metal layer is provided. The dielectric substrate has a first region and a second region. The first patterned metal layer is disposed on a first side of the dielectric substrate and corresponds to the first region, wherein the first region and the second region have different etching rates with respect to an etching solution. The second patterned metal layer is disposed on the first side or a second side opposite to the first side of the dielectric substrate.