Semiconductor structure and method for forming the same

Semiconductor structure and method for forming the same

A semiconductor structure including a MIM capacitor includes a substrate, a MIM capacitor disposed over the substrate, a first insulating layer disposed over the MIM capacitor, an ONON stack disposed over the first insulating layer, a connecting via disposed in the first insulating layer, and a conn...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Wu, Tung-Jiun, Wang, Ming-Yih, Chang, Mingni, Lu, Yinlung
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor structure including a MIM capacitor includes a substrate, a MIM capacitor disposed over the substrate, a first insulating layer disposed over the MIM capacitor, an ONON stack disposed over the first insulating layer, a connecting via disposed in the first insulating layer, and a connecting pad disposed in the ONON stack and in contact with the connecting via. The ONON stack covers sidewalls of the connecting pad and a portion of a top surface of the connecting pad.