Process method and structure for high voltage MOSFETs

A semiconductor power device formed in a semiconductor substrate that includes a plurality of trenches formed at a top portion of the semiconductor substrate. The trenches extend laterally across the semiconductor substrate along a longitudinal direction and each trench has a nonlinear portion thus the nonlinear portion has a trench sidewall perpendicular to the longitudinal direction of the trench. A plurality of trench bottom dopant regions are formed below the trench bottom surface. A sidewall dopant region is formed along the perpendicular sidewall wherein the sidewall dopant region extends vertically downward along the perpendicular sidewall of the trench to reach the trench bottom dopant region and pick-up the trench bottom dopant region to the top surface of the semiconductor substrate.