Isolated laterally diffused metal oxide semiconductor (LDMOS) transistor having low drain to body capacitance
A transistor, such as laterally diffused (LD) transistor, having a band region below a drift well is disclosed. The band region and drift well are oppositely doped. The band region is self-aligned to the drift well. The band region reduces the depth of the drift well. A shallower drift well reduces...
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| creator | Purakh, Raj Verma Li, Liming Zhang, Shaoqiang Jain, Ruchil Kumar |
| description | A transistor, such as laterally diffused (LD) transistor, having a band region below a drift well is disclosed. The band region and drift well are oppositely doped. The band region is self-aligned to the drift well. The band region reduces the depth of the drift well. A shallower drift well reduces risk of punch-through, improving reliability. In addition, the shallower drift well reduces the drain to body parasitic capacitance which improves performance. |
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The band region and drift well are oppositely doped. The band region is self-aligned to the drift well. The band region reduces the depth of the drift well. A shallower drift well reduces risk of punch-through, improving reliability. In addition, the shallower drift well reduces the drain to body parasitic capacitance which improves performance.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200609&DB=EPODOC&CC=US&NR=10680099B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200609&DB=EPODOC&CC=US&NR=10680099B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Purakh, Raj Verma</creatorcontrib><creatorcontrib>Li, Liming</creatorcontrib><creatorcontrib>Zhang, Shaoqiang</creatorcontrib><creatorcontrib>Jain, Ruchil Kumar</creatorcontrib><title>Isolated laterally diffused metal oxide semiconductor (LDMOS) transistor having low drain to body capacitance</title><description>A transistor, such as laterally diffused (LD) transistor, having a band region below a drift well is disclosed. 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The band region and drift well are oppositely doped. The band region is self-aligned to the drift well. The band region reduces the depth of the drift well. A shallower drift well reduces risk of punch-through, improving reliability. In addition, the shallower drift well reduces the drain to body parasitic capacitance which improves performance.</abstract><oa>free_for_read</oa></addata></record> |
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| title | Isolated laterally diffused metal oxide semiconductor (LDMOS) transistor having low drain to body capacitance |
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