Isolated laterally diffused metal oxide semiconductor (LDMOS) transistor having low drain to body capacitance

Isolated laterally diffused metal oxide semiconductor (LDMOS) transistor having low drain to body capacitance

A transistor, such as laterally diffused (LD) transistor, having a band region below a drift well is disclosed. The band region and drift well are oppositely doped. The band region is self-aligned to the drift well. The band region reduces the depth of the drift well. A shallower drift well reduces...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Purakh, Raj Verma, Li, Liming, Zhang, Shaoqiang, Jain, Ruchil Kumar
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A transistor, such as laterally diffused (LD) transistor, having a band region below a drift well is disclosed. The band region and drift well are oppositely doped. The band region is self-aligned to the drift well. The band region reduces the depth of the drift well. A shallower drift well reduces risk of punch-through, improving reliability. In addition, the shallower drift well reduces the drain to body parasitic capacitance which improves performance.