Semiconductor device having diode devices with different barrier heights and manufacturing method thereof

Semiconductor device having diode devices with different barrier heights and manufacturing method thereof

The present disclosure provides a method of manufacturing a Schottky diode. The method includes: providing a substrate; forming a first well region in the substrate; defining a first portion and a second portion on a surface of the first well region and performing a first ion implantation on the fir...

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Hauptverfasser: Tsui, Felix Ying-Kit, Chang, Yu-Chi, Lo, Wen-Shun
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Tsui, Felix Ying-Kit
Chang, Yu-Chi
Lo, Wen-Shun
description The present disclosure provides a method of manufacturing a Schottky diode. The method includes: providing a substrate; forming a first well region in the substrate; defining a first portion and a second portion on a surface of the first well region and performing a first ion implantation on the first portion while keeping the second portion from being implanted; forming a first doped region by heating the substrate to cause dopant diffusion between the first portion and the second portion; and forming a metal-containing layer on the first doped region to obtain a Schottky barrier interface.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10658456B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10658456B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10658456B23</originalsourceid><addsrcrecordid>eNqNi00KwjAUBrtxIeodngcQ_GtxrSjuq-sSky_NA5uU5KVe3wo9gKuBYWZecI2OdfAmawmRDAbWIKcG9i0ZDgaTS_RhcaOyFhFe6KViZERy4NZJIuUNdcpnq7Tk-Ns7iAuGxI1DsMtiZtU7YTVxUaxv18flvkEfGqReaXhI86x326o8HcvqvD_803wBrVxBmQ</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor device having diode devices with different barrier heights and manufacturing method thereof</title><source>esp@cenet</source><creator>Tsui, Felix Ying-Kit ; Chang, Yu-Chi ; Lo, Wen-Shun</creator><creatorcontrib>Tsui, Felix Ying-Kit ; Chang, Yu-Chi ; Lo, Wen-Shun</creatorcontrib><description>The present disclosure provides a method of manufacturing a Schottky diode. The method includes: providing a substrate; forming a first well region in the substrate; defining a first portion and a second portion on a surface of the first well region and performing a first ion implantation on the first portion while keeping the second portion from being implanted; forming a first doped region by heating the substrate to cause dopant diffusion between the first portion and the second portion; and forming a metal-containing layer on the first doped region to obtain a Schottky barrier interface.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200519&amp;DB=EPODOC&amp;CC=US&amp;NR=10658456B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20200519&amp;DB=EPODOC&amp;CC=US&amp;NR=10658456B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Tsui, Felix Ying-Kit</creatorcontrib><creatorcontrib>Chang, Yu-Chi</creatorcontrib><creatorcontrib>Lo, Wen-Shun</creatorcontrib><title>Semiconductor device having diode devices with different barrier heights and manufacturing method thereof</title><description>The present disclosure provides a method of manufacturing a Schottky diode. The method includes: providing a substrate; forming a first well region in the substrate; defining a first portion and a second portion on a surface of the first well region and performing a first ion implantation on the first portion while keeping the second portion from being implanted; forming a first doped region by heating the substrate to cause dopant diffusion between the first portion and the second portion; and forming a metal-containing layer on the first doped region to obtain a Schottky barrier interface.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNi00KwjAUBrtxIeodngcQ_GtxrSjuq-sSky_NA5uU5KVe3wo9gKuBYWZecI2OdfAmawmRDAbWIKcG9i0ZDgaTS_RhcaOyFhFe6KViZERy4NZJIuUNdcpnq7Tk-Ns7iAuGxI1DsMtiZtU7YTVxUaxv18flvkEfGqReaXhI86x326o8HcvqvD_803wBrVxBmQ</recordid><startdate>20200519</startdate><enddate>20200519</enddate><creator>Tsui, Felix Ying-Kit</creator><creator>Chang, Yu-Chi</creator><creator>Lo, Wen-Shun</creator><scope>EVB</scope></search><sort><creationdate>20200519</creationdate><title>Semiconductor device having diode devices with different barrier heights and manufacturing method thereof</title><author>Tsui, Felix Ying-Kit ; Chang, Yu-Chi ; Lo, Wen-Shun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10658456B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Tsui, Felix Ying-Kit</creatorcontrib><creatorcontrib>Chang, Yu-Chi</creatorcontrib><creatorcontrib>Lo, Wen-Shun</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Tsui, Felix Ying-Kit</au><au>Chang, Yu-Chi</au><au>Lo, Wen-Shun</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device having diode devices with different barrier heights and manufacturing method thereof</title><date>2020-05-19</date><risdate>2020</risdate><abstract>The present disclosure provides a method of manufacturing a Schottky diode. The method includes: providing a substrate; forming a first well region in the substrate; defining a first portion and a second portion on a surface of the first well region and performing a first ion implantation on the first portion while keeping the second portion from being implanted; forming a first doped region by heating the substrate to cause dopant diffusion between the first portion and the second portion; and forming a metal-containing layer on the first doped region to obtain a Schottky barrier interface.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor device having diode devices with different barrier heights and manufacturing method thereof
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T06%3A33%3A09IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Tsui,%20Felix%20Ying-Kit&rft.date=2020-05-19&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS10658456B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true