Semiconductor device having diode devices with different barrier heights and manufacturing method thereof
The present disclosure provides a method of manufacturing a Schottky diode. The method includes: providing a substrate; forming a first well region in the substrate; defining a first portion and a second portion on a surface of the first well region and performing a first ion implantation on the fir...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | The present disclosure provides a method of manufacturing a Schottky diode. The method includes: providing a substrate; forming a first well region in the substrate; defining a first portion and a second portion on a surface of the first well region and performing a first ion implantation on the first portion while keeping the second portion from being implanted; forming a first doped region by heating the substrate to cause dopant diffusion between the first portion and the second portion; and forming a metal-containing layer on the first doped region to obtain a Schottky barrier interface. |
|---|