Semiconductor device including a blocking layer having a varying thickness

According to one embodiment, a semiconductor device includes a substrate, a stacked body, and a columnar portion. The stacked body, provided on the substrate, includes first conductive layers and first insulating layers provided alternately along a first direction. The columnar portion extends throu...

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Bibliographische Detailangaben
Hauptverfasser:	Yamada, Kenta, Ishigaki, Hirokazu, Sawabe, Ryosuke, Kinoshita, Shigeru
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	According to one embodiment, a semiconductor device includes a substrate, a stacked body, and a columnar portion. The stacked body, provided on the substrate, includes first conductive layers and first insulating layers provided alternately along a first direction. The columnar portion extends through the stacked body in the first direction. The columnar portion includes a blocking layer, a charge storage layer, a tunneling layer, and a semiconductor layer. The columnar portion includes a first portion and a second portion. The second portion is provided on the substrate side of the first portion. A dimension in the second direction of the second portion is smaller than a dimension in a second direction of the first portion. A portion of the blocking layer is provided at the second portion being thicker than a portion of the blocking layer provided at the first portion.