Semiconductor memory device

Semiconductor memory device

According to one embodiment, a semiconductor memory device includes a first interconnect layer, a first insulating layer, a second interconnect layer, and a memory pillar including a second insulating layer, a charge storage layer, and a third insulating layer stacked on a part of a side surface and...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Ishida, Takashi, Kawai, Tomoya, Toriyama, Shuichi
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:According to one embodiment, a semiconductor memory device includes a first interconnect layer, a first insulating layer, a second interconnect layer, and a memory pillar including a second insulating layer, a charge storage layer, and a third insulating layer stacked on a part of a side surface and on the bottom surface of the memory pillar, and a first silicide layer in contact with the first interconnect layer, a semiconductor layer, and a second silicide layer stacked in order along a first direction. A height position of a bottom surface of the first silicide layer is lower than a top surface of the first interconnect layer, and a height position of a top surface of the first silicide layer is higher than a bottom surface of the second interconnect layer.