Semiconductor device including variable resistance memory device

A semiconductor device includes a substrate including a memory cell region and a logic region; a variable resistance memory device on the memory cell region; a logic device on the logic region; a first horizontal bit line extending in a horizontal direction on a surface of the substrate on the memor...

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Bibliographische Detailangaben
Hauptverfasser: Koh, Gwan-hyeob, Lee, Kil-ho, Song, Yoon-jong
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor device includes a substrate including a memory cell region and a logic region; a variable resistance memory device on the memory cell region; a logic device on the logic region; a first horizontal bit line extending in a horizontal direction on a surface of the substrate on the memory cell region and electrically connected to the variable resistance memory device; a second horizontal bit line extending in a horizontal direction on the surface of the substrate on the logic region and electrically connected to the logic device; and a vertical bit line electrically connected to the first horizontal bit line and the second horizontal bit line and extending perpendicular to the surface of the substrate.