Foam in ion implantation system

Disclosed is a semiconductor processing apparatus including one or more components having a conductive or nonconductive foam material. In some embodiments, the component is a plasma flood gun including a shield assembly coupled to the plasma flood gun. The shield assembly may include a first shield...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Pixley, James Alan, Stacy, Thomas, Stone, Lyudmila, Layne, Philip, Hermanson, Eric D
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Disclosed is a semiconductor processing apparatus including one or more components having a conductive or nonconductive foam material. In some embodiments, the component is a plasma flood gun including a shield assembly coupled to the plasma flood gun. The shield assembly may include a first shield having a first main side facing an ion beam target, and a connection block coupled to a second main side of the first shield. The shield assembly may further include a mounting plate coupled to the connection block, and a second shield coupled to the mounting plate by a bracket. In some embodiments, the first shield and/or one or more process chamber walls includes a foam material, such as a conductive or nonconductive foam.