Semiconductor device and method of manufacturing the same

A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a p...

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Bibliographische Detailangaben
Hauptverfasser: Lee, Jin-sun, Ahn, Se-hyoung, Choi, Jae-hyoung, Chang, Jae-wan, Kim, Youn-soo, Moon, Sun-min
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor device includes a lower electrode on a substrate, a capacitor dielectric layer on the lower electrode, and an upper electrode on the capacitor dielectric layer. The capacitor dielectric layer includes a base layer on the lower electrode and a dielectric particle layer in at least a portion of the base layer. The base layer includes a first dielectric material, and the dielectric particle layer extends at least partially continuously along a thickness direction of the capacitor dielectric layer and includes a second dielectric material different from the first dielectric material.