Thin film transistor array panel

A thin film transistor array panel includes a substrate, a gate insulating layer, an interface layer, and a semiconductor layer. The gate insulating layer is disposed on the substrate. The interface layer is disposed on the gate insulating layer. The semiconductor layer is disposed on the interface...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Joo, Young Cheol, Moon, Ji Young, Kim, Jong Woo, Cho, Yoon Hyeung, Park, Eun-Kil, Lee, Seung Jae, Ha, Jae Heung, Kim, Hyeong Joon, Han, Sang Jin, Oh, Min Ho
Format: Patent
Sprache:eng
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Zusammenfassung:A thin film transistor array panel includes a substrate, a gate insulating layer, an interface layer, and a semiconductor layer. The gate insulating layer is disposed on the substrate. The interface layer is disposed on the gate insulating layer. The semiconductor layer is disposed on the interface layer. The interface layer includes a fluorinated silicon oxide. The semiconductor layer includes a p-type oxide semiconductor material.