Chemical mechanical polishing compositions and methods for suppressing the removal rate of amorphous silicon

Chemical mechanical polishing compositions and methods for suppressing the removal rate of amorphous silicon

Chemical mechanical polishing compositions contain polyethoxylated amines, phosphoric acid or salts thereof, and positively charged nitrogen containing colloidal silica abrasive particles. The chemical mechanical polishing compositions are used in polishing methods for suppressing the removal rate o...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Penta, Naresh Kumar, Tettey, Kwadwo E, Van Hanehem, Matthew
Format: Patent
Sprache:eng
Schlagworte:
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH
SEMICONDUCTOR DEVICES
SKI WAXES
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Beschreibung
Zusammenfassung:Chemical mechanical polishing compositions contain polyethoxylated amines, phosphoric acid or salts thereof, and positively charged nitrogen containing colloidal silica abrasive particles. The chemical mechanical polishing compositions are used in polishing methods for suppressing the removal rate of amorphous silicon while maintaining tunable oxide to silicon nitride removal rate ratios. The chemical mechanical polishing compositions can be used in front-end-of line semiconductor processing.