Magnetic memory device and method for fabricating the same

Magnetic memory device and method for fabricating the same

A magnetic memory device includes a substrate, a tunnel barrier pattern on the substrate, a first magnetic pattern and a second magnetic pattern spaced apart from each other with the tunnel barrier pattern therebetween, and a short preventing pattern spaced apart from the tunnel barrier pattern with...

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Bibliographische Detailangaben
Hauptverfasser: Noh, Eunsun, Oh, Se Chung, Yun, Sangjun, Nam, KyungTae, Kim, Jae Hoon, Lee, Sung Chul
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:A magnetic memory device includes a substrate, a tunnel barrier pattern on the substrate, a first magnetic pattern and a second magnetic pattern spaced apart from each other with the tunnel barrier pattern therebetween, and a short preventing pattern spaced apart from the tunnel barrier pattern with the second magnetic pattern therebetween. The short preventing pattern includes at least two oxide layers and at least two metal layers, which are alternately stacked.