Storage device including multiple wiring and electrode layers
A storage device includes a first wiring layer, a second wiring layer spaced from the first wiring layer in a first direction, and a plurality of electrode layers stacked in the first direction between the first wiring layer and the second wiring layer. A semiconductor pillar penetrates the pluralit...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A storage device includes a first wiring layer, a second wiring layer spaced from the first wiring layer in a first direction, and a plurality of electrode layers stacked in the first direction between the first wiring layer and the second wiring layer. A semiconductor pillar penetrates the plurality of electrode layers in the first direction. The plurality of electrode layers includes a first electrode layer connected to a first wire in the first wiring layer and a second electrode layer connected to a second wire in the second wiring layer. |
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