Semiconductor device and manufacturing method thereof

A semiconductor device includes: hole source patterns; electron source patterns located between adjacent hole source patterns; a stack structure over the hole source patterns and the electron source patterns; and channel layers penetrating the stack structure, wherein each channel layer is in contac...

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Bibliographische Detailangaben
Hauptverfasser: Kwon, Eun Mee, Jeon, Jong Sung, Lee, Bong Hoon, Lee, Da Som
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:A semiconductor device includes: hole source patterns; electron source patterns located between adjacent hole source patterns; a stack structure over the hole source patterns and the electron source patterns; and channel layers penetrating the stack structure, wherein each channel layer is in contact with a corresponding hole source pattern and an electron source pattern adjacent to the corresponding hole source pattern.